source gases造句
例句與造句
- Documentation should be available specifying the purity , other components and possible impurities that may be present in the source gas and at purification steps , as applicable
如適用，在凈化工序的文件中需詳細(xì)說明這些氣體原料的純度，其它成分和可能存在的雜質(zhì)。 - The micro structure of the films prepared with sih4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd ) and its influence on the photoluminescence and optical properties have systematically studied by the means of the measurements of tem hrem xps sem and raman
對以硅烷為原料氣采用常壓化學(xué)氣相沉積制備的薄膜，利用tem 、 hrem 、 xps 、 sem 、 raman等手段系統(tǒng)研究了沉積溫度、退火后處理等制備工藝對薄膜微結(jié)構(gòu)的影響，分析了微結(jié)構(gòu)的成因。 - By film thickness measured , fourier transformed infrared spectrometer ( ftir ) analysis , x - ray photoelectron spectroscopy ( xps ) analysis and relative irradiance measurement , the effect of microwave input powers on deposition rates , f / c ratios , bonding configurations of ct - c : f films and the radicals in plasma originating from source gases dissociation is analyzed
由于微波功率的改變會(huì)導(dǎo)致等離子體中電子溫度和等離子體密度發(fā)生變化，從而造成不同的源氣體分解過程，結(jié)果微波功率的升高導(dǎo)致了薄膜沉積速率的提高、 f / c比的降低，同時(shí)也導(dǎo)致薄膜中cf和cf _ 3基團(tuán)密度的降低，而保持cf _ 2基團(tuán)密度接近常數(shù)。 - The quality of buffer layer and thin films was analyzed by afm , xrd , rheed and xps respectively . the effect of the experimental parameters such as carbonization time , working pressure , c source gas flow rate , carbonization temperature , different carbonization gas and substrate on the carbonization process was studied firstly . it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite , but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too , and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low , but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough , and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature , the size of particles was increased , the rms is decreased and a good single - crystalline carbonization layer could be obtained , but a rough surface was formed at a excessive high temperature ; the rms of
對于碳化工藝,側(cè)重研究了碳化時(shí)間、反應(yīng)室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質(zhì)量的影響,研究結(jié)果表明:隨著碳化時(shí)間的增長,碳化層的晶粒尺寸隨之變大,表面粗糙度隨之降低,但當(dāng)碳化到一定時(shí)間之后,碳化反應(yīng)減緩,碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應(yīng)室氣壓的升高而變大,適中的反應(yīng)室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時(shí),碳化層的晶粒尺寸隨氣體流量的變化不明顯,但當(dāng)氣體流量增大到一定程度時(shí),碳化層的晶粒尺寸隨氣體流量的增大而明顯變大,同時(shí),適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時(shí),碳化層的晶粒取向不明顯,隨著碳化溫度的升高,碳化層的晶粒尺寸明顯變大,且有微弱的單晶取向出現(xiàn),但取向較差,同時(shí),適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ,以ch _ 4作為c源氣體時(shí)得到的碳化層表面平整得多;比起si ( 100 ) ,選用si ( 111 )作為基片生長的碳化層的晶粒取向一致性明顯更好。 - In this thesis , the history , structure . preparation method and basic properties of nano - composite materials and photoluminescence of nanocrystalline silicon have been summarized . research of the novel antireflecting energy saving coating glass has also been presented . the si / sic composite films are prepared with siht and ? 2 ^ 4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd )
本論文全面介紹了納米材料，特別是納米鑲嵌復(fù)合材料的發(fā)展概況、特性、常用的制備方法、常見的幾種硅系納米材料以及有關(guān)納米硅材料的發(fā)光，并對新型無光污染節(jié)能鍍膜玻璃的研制和發(fā)展作了概述。 - It's difficult to find source gases in a sentence. 用source gases造句挺難的
- In this paper , the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method . the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed
本工作采用蒙特卡羅( monte - carlo )計(jì)算機(jī)模擬的方法，對以ch _ 4 h _ 2為源氣體的電子助進(jìn)化學(xué)氣相沉積( eacvd )金剛石薄膜中的氣相分解過程進(jìn)行了研究，初步建立了eacvd氣相動(dòng)力學(xué)模型，并討論了eacvd中的低溫沉積過程。